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. 2021 Oct 5;11:19779. doi: 10.1038/s41598-021-99173-4

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Vertical Si nanowire arrays fabricated by cryogenic ICP-RIE with different process parameters. The resulting Si nanowire profiles are affected by changing (a) temperature, (b) oxygen content, (c) pressure, (d) RF power, and (e) ICP power. Each of those parameters was varied while keeping the other parameters constant at the default parameter (see “Methods”). The increase in temperature, oxygen content, and pressure, respectively, led to more positively-inclined sidewalls. On the contrary, the rises of RF and ICP powers could remove the positive sidewalls yielding higher nanowires.