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. 2021 Aug 8;8(19):2102437. doi: 10.1002/advs.202102437

Figure 1.

Figure 1

a) Optical image of CVD‐grown MoS2. b) AFM image of a CVD‐grown MoS2 flake with its topographic cross‐sectional profile across a green dashed line. c) PL and Raman (inset) spectra of MoS2. d) Optical image of a representative MoS2 FET fabricated on a hBN flake. e) Schematic of the fabricated MoS2 FET with Au contact. f) Fabrication procedure of MoS2 FETs.