Table 2.
No | Name | Composition of electrodea) | Potential (V vs Li+/Li) | Specific capacity [µAh cm−2µm−1] | Deposition method/temperature [°C] | Refs. |
---|---|---|---|---|---|---|
1 | Titanium oxysulfide | TiOS | 2.25 | dc‐reactive sputtering/T r | [ 206 ] | |
2 | Titanium oxysulfide | TiSi x O y | rf‐sputtering/T r | [ 174 ] | ||
3 | Titanium sulfide | TiSi2 | 2.5 | rf‐sputtering/T r | [ 175 ] | |
4 | [ 207 ] | |||||
5 | Silver iodide | AgI | 2.1 | [ 3 ] | ||
6 | Lithium cobalt oxide | LiCoO2 | 3.5–3.9 | PLD/T r, postannealed 400–850 | [ 208 ] | |
7 | LiCoO2 | 3.5 | 50 | PLD/T r, postannealed 800 | [ 208 ] | |
8 |
LiCoO2 LiCo1‐ x Al x O2 |
3.8 | PLD / 300–700 | [ 209 ] | ||
9 | LiCoO2 |
200 mAh g−1 |
rf‐sputtering/ <180 (amorphous) | [ 210 ] | ||
10 |
LiCoO2 (LE) LiCo1‐ x Al x O2 (LE) |
89 mAh g−1 89/3 mAh g−1 |
PLD/700 PLD/600 |
[ 211 ] | ||
11 | LiCoO2 (LE) | 3.5 | 195 mC cm−2 µm−1 | PLD/100–300 | [ 212 ] | |
12 | 3.9 | PLD | [ 213 ] | |||
13 | 52.5 | rf‐sputtering (350 °C) with rf plasma treatment | [ 214 ] | |||
14 | 60 | rf‐sputtering/up to 500 | [ 215 ] | |||
15 | 48 | Sol‐gel, annealed 600–800 | [ 199 ] | |||
16 | 67 | rf‐sputtering/T r, postannealed 500 | [ 216 ] | |||
17 | LiNi0.8Co0.2O2 | 3.7 |
89 mAh g−1 |
PLD/500–900, postannealed 1000 | [ 217 ] | |
18 | Lithium nickel‐manganese‐cobalt oxide | Li(Ni x Mn y Co z )O2 (LE) | 4.2–3.9 | 164 mAh g−1 | rf‐sputtering / postannealed 700 | [ 218 ] |
19 | ||||||
20 | Li(Ni x Mn y Co z )O2 | 3.8–3.5 | 33 | |||
21 | Li(Ni1/3Mn1/3Co1/3)O2 | 177 mAh g−1 | PLD/ postannealed 450 | [ 219 ] | ||
22 | Lithium‐rich nickel‐manganese‐cobalt oxide | xLi2MnO3‐(1‐x) Li(Mn0.375Ni0.375Co0.25)O2 (LE) | 4.5–2 | Spin coat/postannealed 450 | [ 220 ] | |
23 | Li[Li0.2Mn0.54Co0.13Ni0.13]O2 | 45 | rf‐sputtering/T r, post annealed 450–600 | [ 221 ] | ||
24 | LiCoBO3 (LE) | 3.5–2.5 | [ 222 ] | |||
25 | Li1+ x V3O8 | 2.9 | Li1+ x V3O8‐polyethylene oxide composite | [ 223 ] | ||
26 | Li1+ x V3O8 (LE) | 3.8–1.5 | 250 mAh g−1 | rf‐sputtering (mixed amorphous and crystalline) | [ 224 ] | |
27 | LiV2O5 | 3.5 | 30 | Plasma enhanced chemical vapor deposition/250 | [ 225 ] | |
28 | Lithium manganese oxide | LiMn2O4 (LE) | 4.0 | rf‐sputtering/T r, postannealed 650–800 | [ 207 ] | |
rf‐sputtering/T r, postannealed 400 | [ 226 ] | |||||
PLD / 500 | [ 227 ] | |||||
29 | LiMn2O4 | 4.2 | 50 | Reactive electron beam evaporation/50 (substrate), postannealed 800 | [ 228 ] | |
30 | 47 | rf‐sputtering/T r, postannealed 750 | [ 229 ] | |||
31 | 4.1–3.9 | 80 mAh g−1 | rf‐sputtering/T r, postannealed 750 | [ 230 ] | ||
32 | Li x Mn2‐ y O4 (LE) | 4.1–3.9 | 121 mAh g−1 | rf‐sputtering/T r with bias | [ 231 ] | |
33 | LiMn2O4 (LE) | 4.1 | rf‐sputtering/T r, postannealed 700 | [ 232 ] | ||
34 | Sol‐gel combined with oxygen‐plasma irradiation/ 723, 973 K | [ 233 ] | ||||
35 | Chemical solution deposition/postannealed 500–750 | [ 234 ] | ||||
36 | 4.0, 3.0 | 1.2 Ah cm−3 | rf‐sputtering/T r, postannealed 800 | [ 236 ] | ||
37 | LiSn0.0125Mn1.975O4 (LE) | 4.2 | 68 | rf‐sputtering/T r, postannealed 500 | [ 235 ] | |
38 | LiMn2O4/SrRuO3 (LE) | 4.1 | 125 mAh g−1 | PLD/650 | [ 237 ] | |
39 | Lithium nickel manganese oxide | LiNi0.5Mn1.5O4 (LE) | 4.7 | 155 mAh g−1 | Electrostatic spray deposition/450, postannealing 700 | [ 238 ] |
40 | 4.7 | 45 | Sol‐gel/post annealed 500–700 | [ 239 ] | ||
41 | 4.8 | 120–155 mAh g−1 | PLD/600 | [ 240 , 241 , 242 , 243 , 244 , 245 , 246 ] | ||
42 | 5 & 4 | 120 mAh g−1 | rf‐sputtering/T r, | [ 247 ] | ||
43 | 4.7 | 50 | rf‐sputtering/T r, postannealed 700 or 750 | [ 248 ] | ||
44 | 4.7 | 104 mAh g−1 | rf‐sputtering/T r, post annealed 600 | [ 249 ] | ||
45 | LiNi0.5Mn1.5O4 | 4.8 | PLD/ 500, 650 | [ 250 ] | ||
46 | LiCoMnO4 (LE) | 5 | 110 mAh g−1 | PLD/500 | [ 251 ] | |
47 | Lithium iron phosphate | LiFePO4 (LE) | 3.4 | PLD/Tr , postannealed 773 K | [ 252 ] | |
48 | 160 mAh g−1 | PLD/600 | [ 253 ] | |||
49 | PLD/500 | [ 254 ] | ||||
50 | 33 | rf‐sputtering/T r, 500 | [ 255 ] | |||
51 | 56 | rf‐sputtering/up to 500 | [ 256 ] | |||
52 | Lithium cobalt phosphate | LiCoPO4 | 4.8 | rf‐sputtering/T r, postannealed 300–700 | [ 257 ] | |
53 | Vanadium pentoxide | V2O5 | 3.7 | dc sputtering/T r | [ 207 ] | |
54 | 3–2 | 43 | Thermal evaporation | [ 258 ] | ||
55 | V2O5 (LE) | 3.4 | PLD/T r, 500 | [ 211 ] | ||
56 | ALD / postannealed 400 | [ 259 ] | ||||
57 | Mangenues dioxide | MnO2 | 3 | rf‐sputtering/T r, postannealed up to 450 | [ 260 ] | |
58 | Molybdenum oxide | MoO3‐ x | 3–1.9 | 85 | rf‐sputtering/100 | [ 261 ] |
59 | Molybdenum oxysulfide | MoS x O y | 2.4–1.3 | Electrochemical deposition | [ 262 ] |
a)ATFBs were tested based on full cells unless otherwise stated as “LE” indicating half‐cell using the liquid electrolyte.