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. 2021 Oct 6;21(19):6634. doi: 10.3390/s21196634

Figure 7.

Figure 7

Transition of the measured resistance change after light injection of 1.0, 2.0, 4.0, and 6.3 mW for TM mode light with the Si waveguides with 200 nm-thick SiO2 buffer layer. Input light was injected at t = 4~5.5 s.