Table 3. Characterization Results of the Compound (TM3)2-SiPc.
| characteristic | value |
|---|---|
| Ered,1 | –0.95 V (irrev.) |
| Eox,1 (half-wave) | 1.02 V |
| Td,5% | 264 °C |
| Tg/Tc./Tm | 223 °C/–/– |
| ΔHc./ΔHm | –/– |
| λmax, abs., solution | 670 nm |
| λmax, PL., solution | 685 nm |
| characteristic | value |
|---|---|
| Ered,1 | –0.95 V (irrev.) |
| Eox,1 (half-wave) | 1.02 V |
| Td,5% | 264 °C |
| Tg/Tc./Tm | 223 °C/–/– |
| ΔHc./ΔHm | –/– |
| λmax, abs., solution | 670 nm |
| λmax, PL., solution | 685 nm |