Figure 2.

Temperature-dependent intrinsic and extrinsic transport parameters probed by THz-TDS. (a) THz-proved DC resistivity, ${\rho }_{dc,THz}$, as a function of temperature for parallel (black) and perpendicular (red) geometries. (b) Temperature-dependent electron scattering time, $\tau$, for parallel (black) and perpendicular (red) geometries. (c) Temperature-dependent charge density/effective mass, $n/m^{\ast }$, for parallel (black) and perpendicular (red) geometries. (d) Charge concentration, $n$, as a function of temperature obtained from ordinary Hall effect measurement. (e) effective mass,$m^{\ast }$, as a function of temperature. The error bars in (a)–(e) are smaller than the symbol size.