Figure 3.

Electric field distribution at $\lambda$ = 800 nm, with and without the impact generated by the variation of the Fermi level when $V_g=20$ V. In this figure it is possible to appreciate changes in the calculated field lines for the TE and TM modes, when 20 V at the gate is applied and a constant voltage of 1 V is maintained between source and drain, however, only the TE mode presents significant variation in the effective refractive index in the presence of the surface current generated by the electric field applied to the proposed capacitor.