Figure 10.

Hybrid structure. (a)Schematic of the graphene–quantum dot hybrid phototransistor, in which a graphene flake is deposited onto a Si/SiO₂ structure and coated with PbS quantum dots. (b) Schematic illustration of the field-effect transistor based on ZnPc-treated MoS₂. (c) Noise spectral density of the photodetector. Inset: Illustration of the bent photodetector. (d) Photocurrent of the graphene–quantum dot transistor for different optical powers as a function of VDS showing a linear dependence on the bias. Inset: total current. (e) The time-dependent photoresponse dynamics for a MoS₂ device after varied ZnPc treatments are plotted on a linear scale. (f) Responsivity versus incident power for the photodetector before bending, bending with a curvature of 40 mm and after bending. (a,d) Reproduced with permission from [19]. Copyright Nature Publishing Group, 2012. (b,e) Reproduced with permission from [104]. Copyright American Chemical Society, 2018. (c,f) Reproduced with permission from [39]. Copyright Wiley, 2018.