Table 1.

Performance of 2D and bulk material phototransistors.

Enhanced Type	Active Materials	Mechanism	Spectral Range	Responsivity	Detectivity (Jones)	Response Time	Ref.
Metal/2D	MoS2	PB	980, 1550 nm	1.9 × 104 A/W			[85]
	MoS2	PG	550 nm	105 A/W	1014		[86]
	Perovskite/Au	PC	405 nm	1.6 × 107 A/W		81 μs	[87]
	PdSe2	PG	1.06 um	708 A/W	1.31 × 109	220 ms	[88]
	MoSe2	PC	670–1458 nm	10.1 A/W			[89]
	WSe2	PV	532 nm	2.31 A/W	9.16 × 1011		[90]
	TaIrTe4	TP	4 um	130.2 mA/W			[83]
	Td-WTe2	TP	450–2400 nm				[91]
	Td-MoTe2	PTE	532 nm–10.6 μm	0.40 mA/W	1.07 × 108	43 μs	[74]
Heterostructure	MoS2	PG	637 nm	96.8 A/W	4.75 × 1014	400 μs	[92]
	p-MoS2/n- MoS2	PG	640–800 nm	7 × 104 A/W	3.5 × 1014	10 ms	[93]
	Graphene/MoS2	PV	450–700 nm	1.1 × 105 A/W	1.4 × 1014	100 ms	[94]
	MoS2/WS2	PV	532 nm	4.36 mA/W	4.36 × 1013	4 ms	[95]
	MoS2/Si	PV	350–1100 nm	908.2 mA/W	1.889 × 1013	56 ns	[96]
	WSe2/MoS2	PV	450–800 nm	2700 A/W	5 × 1011	17 ms	[47]
	Perovskite/CdS	PV	350–750 nm	0.48 AW	2.1 × 1013	0.54 ms	[97]
	PbI2/graphene/PET	PV	480 nm	45 A/W		35 μs	[98]
	SnS2/MoO3	PV	515 nm	2.3 × 103 A/W	3.2 × 1012	2.72 ms	[99]
	Graphene/GaAs	PV	650 nm	1321 A/W	3.24 × 108	119 ms	[100]
	Gr1/ Perovskite/ Gr2	PV	457 nm	3 × 109 A/W	8.7 × 101	50 μs	[101]
	PtTe2/Si	PV	200 nm–10.6 µm		6.92 × 109	2.4 μs	[41]
	PtTe2/graphene	PV	2600 um	1.6 A/W		20 μs	[102]
	Gr1/BP/Gr2	PV	0.5–3.5 um	1.43 A/W	8.67 × 108	1.8 ns	[103]
Hybrid structure	Monolayer MoS2	PG	532 nm	430 A/W	1011	72 ms	[104]
	graphene/Cu2O	PG	450 nm	1010 A/W	1.4 × 1012	273 ms	[39]
	InP/BP	PG	405 nm	109 A/W	4.5 × 1016	5 ms	[42]
	MoS2/ZnCdSe QD	PV	<700 nm	3.7 × 104 A/W	1012	0.3 s	[105]
	Ti2O3/ Graphene	PC	4.5–10 um	300 A/W	7 × 108	1.2 ms	[53]
	Chemical doping MoS2	PG	450–750 nm	99.9 A/W	9.4 × 1012	16.6 s	[106]
Cavities	graphene	PV, PTE	96 um	0.23 A/W	2.8 × 1010	265 ns	[107]
	Gr/TiO2	PG	325 nm	475.5 A/W		220 ms	[108]
Waveguides	MoTe2/graphene	PG	1300 nm	0.2 A/W		19 ps	[109]
	BP	PB	3.725, 3.775, 3.825 um	11.31 A/W		0.3 ms	[110]
	graphene	PB, PC	2 um	70 mA/W			[73]
	MoTe2	PV	1500 nm	0.5 A W		3.2 ns	[111]
Plasmonics	graphene	PTE	500–900 nm	0.125 mA/W		0.4 ps	[40]
	graphene	PV	2400 nm	0.12 A/W			[112]
	graphene/GaAs/Ag NPs	PV	325–980 nm	210 mA/W	2.98 × 1013		[113]
	Au NPs/WS2/MoS2	PV	532 nm	0.49 A/W			[114]
Bulk detector	Si	PC	630nm	1.5 A/W		0.11 s	[115]
	Ge	PC	1.7 um	0.6 A/W	1011	0.87 μs	[25]
	Ge	PC	390 nm	0.63 A/W	7 × 1011		[116]
	SiC	PC	445 nm	12.2 A/W	1.13 × 109	0.39 s	[117]
	GaN/Sn:Ga2O3	PV	254 nm	3.05	1.69 × 1013	18 ms	[118]