Table 1.

Temperature-dependent thermal conductivity of GaN/different substrate materials, TBR values for GaN/substrate interfaces used in simulations are listed [41,44].

Material	Thermal Conductivity κ (W/m-K)	$\mathbf{TBR} ({\mathbf{m}}^2\mathbf{K}/\mathbf{GW})$	Thermal Expansion Coefficient, (10−6/K)	Lattice Mismatch with GaN (%)
GaN	160 (${300/\mathrm{T})}^{1.4}$	–	–	–
Sapphire	35 (${300/\mathrm{T})}^1$	10–40	39	16
Si	150 (${300/\mathrm{T})}^{1.3}$	10–40	54	17
SiC	420 (${300/\mathrm{T})}^{1.3}$	30–60	3.2	4
Diamond	1200 (${300/\mathrm{T})}^1$	20–50	62.5	12