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. 2021 Sep 27;12(10):1159. doi: 10.3390/mi12101159

Table 3.

Device characteristic of different Boron doped level in handle wafer.

Sample A B
Dope-level Light doped Heavy doped
Doping concentration
(atoms-cm−3)
1.35 × 1015~1.49 × 1016 5.95 × 1019~1.26 × 1020
Bowing (μm) −258 6.7
FWHM (arcsec) (1 0 2) 1484 1188