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. 2021 Oct 16;11(10):2743. doi: 10.3390/nano11102743

Figure 2.

Figure 2

Process flow diagrams showing the fabrication of self-aligned PGs, BGs, and source/drain reservoirs. (a) EBL opening of the selected c-Si ridges (ridge #2) that would serve as CBs; (b) the removal of the top Si3N4 and the top portion of the selected c-Si ridges (ridge #2) using CHF3 plasma and SF6/C4F8 plasma, respectively, forming CBs; (c) the growth of a thin thermal SiO2 over the CBs; (d) deposition of poly-Si overlayers; (e) direct etch back of poly-Si overlayers and top Si3N4 over the outmost c-Si ridges (for instance, ridges #1, #3, #N - 1, #N), forming PGs over the Ge QDs and BGs over CBs via SiO2 layers; (f) silicidation of the outmost c-Si ridges, PGs, and BGs, forming polycide reservoirs, PG, and BG, respectively.