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. 2021 Oct 29;7(44):eabg9450. doi: 10.1126/sciadv.abg9450

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Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 2. — (A) Measurement images for mechanical flexibility of the SIZO/ion gel synaptic device. The flexible synapse was attached to the arch-shaped metal bars with a radius of 30, 10, or 5 mm using scotch tape. (B and C) Static I_post-V_WC and dynamic LTP/D characteristics with respect to the bending radius. (D) Extracted ΔV_th (top panel) and ΔG_post (bottom panel) and their RSDs with respect to the bending radius. (E) Measurement images for mechanical durability of the SIZO/ion gel synaptic device. The side parts of the PI film including the synaptic device array were attached to the bending machine using scotch tape, and then, we operated the bending machine to apply tensile stress to the device repeatedly 500, 1000, and 1500 times. (F and G) Static I_post-V_WC and dynamic LTP/D characteristics of the synaptic device with regard to the bending cycle. (H) Extracted ΔV_th (top panel) and ΔG_post (bottom panel) and their RSDs with regard to the bending cycle (photo credit: Jeong-Ick Cho, Sungkyunkwan University).