Figure 3.

(a) Schematics of nominal sample structure (SiO_x sub./Ta (5 nm)/Ru (10 nm)/Ta (5 nm)/Pt (10 nm)/heavy metal insertion layer (0.2 nm)/Co (1.7 nm)/TiO_x (5 nm)/Pt (5 nm)/Ru (2 nm)). (b) Perpendicular (colored lines) and in-plane (black lines) magnetization curves of the heavy mental-inserted samples. The fitting curve used for evaluating magnetic anisotropy energy is also shown by light gray lines. (c) Bias-voltage-dependence of H_c of the samples at different annealing temperatures. (d) Bias-voltage-dependent perpendicular magnetization curves of the samples at a representative annealing temperature.