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(a) Bias-voltage-dependence of Hc of Ir-inserted sample (post annealed at 250 °C). The bias-voltage was applied in order: from − 1.5 V to 2.0 V (ascending branch, black closed circles) and from 2.0 V to − 1.5 V (descending branch, black open circles). (b) Device size (S) dependence of device capacitance (C) of nominal SiOx sub./Ta (5 nm)/Ru (10 nm)/Ta (5 nm)/Pt (10 nm)/Co (1.7 nm)/TiOx (5 nm)/Pt (5 nm)/Ru (2 nm)) sample. The simple schematics of the device is shown in the inset.
