Figure 5.

dc magnetic susceptibility versus temperature measured between 2 and 300 K at 200 Oe, 500 Oe, and 5 kOe for Ho₂Ni_0.8Si_1.2 (a) and at 500 Oe, 1 kOe, and 5 kOe for Ho₂Ni_0.8Ge_1.2 (b). The insets show an enlarged view of the ZFC and FC magnetization data (0–60 K) measured at 200 and 500 Oe for Ho₂Ni_0.8Si_1.2 (inset in part a) and at 500 Oe and 1 kOe for Ho₂Ni_0.8Ge_1.2 (inset in part b); the dotted lines in both insets represent the first derivative of the magnetization data for the data measured at the higher field [500 Oe for Ho₂Ni_0.8Si_1.2 (a) and 1 kOe for Ho₂Ni_0.8Ge_1.2 (b)].