Overview of different nanostructured metal oxide semiconductors used in DSC and their best performance in devices.
Semiconductor | Bandgap (eV) | Nanostructure | Sensitizer – electrolyte | PCE (%) | Year | Ref. |
---|---|---|---|---|---|---|
TiO2 (anatase) | 3.2 | Mesoporous | ADEKA-1/LEG4 – Co(phen)3 | 14.3 | 2015 | 24 |
TiO2 (rutile) | 3.0 | Nanorod array | N719 – I−/I3− | 11.1 | 2019 | 228 |
TiO2 (brookite) | 3.2 | Mesoporous | N719 – I−/I3− | 8.2 | 2020 | 229 |
ZnO | 3.2 | Aggregated nanoparticles | N719 – I−/I3− | 7.5 | 2011 | 230 |
SnO2 | 3.5 | Nanoparticles/ | N719 – I−/I3− | 6.3 | 2013 | 231 |
Nb2O5 | 3.6 | Nanorod array | N719 – I−/I3− | 6.0 | 2013 | 231 |
Nb3O7(OH) | 3.0 | Nanorod array | N719 – I−/I3− | 6.8 | 2013 | 231 |
Zn2SnO4 | 3.6 | Aggregated nanoparticles | X73 – Co(phen)3 | 8.1 | 2020 | 232 |
BaSnO3 | 2.9 | Mesoporous | N719 – I−/I3− | 6.6 | 2019 | 233 |
Ba0.8Sr0.2SnO3 | 3.0 | Mesoporous | N719 – I−/I3− | 7.7 | 2019 | 233 |