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. 2021 Nov 18;12:6696. doi: 10.1038/s41467-021-27050-9

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a PVTRI arrays in a 4-inch silicon wafer. b The optical microscope image to show a minimum pixel (40 × 40 μm) of the arrays. c The schematic device structure of a single Si:CQD PVTRI. At V_bias < 0, the p-Si substrate acts as the emitter while the base and collector are consisted of the ultrathin PbS n-CQD and p-CQD films, respectively. d The cross-sectional SEM image of the PVTRI. TEM (e) and HRTEM (f) images with the SAED patterns (g) of the PbS CQDs. h XRD analysis of PbS CQDs. XPS elementary composition (i) and S 2p peak spectra (j) of PbS-I and PbS-EDT. k Absorption spectra of the PbS CQDs and silicon.