Fig. 3. Operation of the PVTRI with excitation of SWIR.

Energy bands and operation mechanism of the PVTRI with a negative bias (V_bias < 0 V) and b positive bias (V_bias > 0 V) voltages with excitation of SWIR and in the dark, respectively. c Output characteristics of the PVTRI under 1550 nm illumination with different incident powers. d The responsivity and specific detectivity of the PVTRI as a function of bias voltages at low incident power of 5.6 mW·m⁻². e The photocurrents as functions of incident powers at 0, −1, and 1 V, respectively.