Key choice of component: (a) Deterministic single photon sources from III-V QD integrated in a suspended waveguide with 50/50 beam splitter [34]. (b) Traveling wave single photon detector evanescently coupled integrated to silicon waveguide [35]. Operation conditions: (c) Quantum frequency conversion in a hybrid system interfacing III-V quantum emitters operating at cryogenic temperatures and nonlinear SiN resonator operating at room temperature[10]. Connectivity: (d) Adiabatic coupling to enable efficient coupling between different materials comprising a hybrid quantum photonic circuit, in this case GaAs and silicon nitride[20]. (e) Photonic wire bonding between different types of photonic chips, in this case, an InP laser chip and silicon photonic chip[44]. Large scale integration: (f) Multidimensional path entanglement in silicon photonics, through simultaneous pumping of 16 photon pair sources[46]. (g) Inverse designed quantum photonic circuit, symmetric along the left edge, that can be used to collect the emission and entangle two quantum emitters. [51]