Figure 2.

Dependencies G = f(T_p) for silicon with resistivity ρ = 0.4 Ω cm, boron-doped, implanted with Ne⁺ neon ions with energy E = 100 keV, annealed at T_a = 598 K, determined for the frequency f of 10 kHz (a) and 1 MHz, respectively, (b) and three different doses of ions D = 4.0 × 10¹³ cm⁻²; 2.2 × 10¹⁴ cm⁻²; 4.0 × 10¹⁴ cm⁻².