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. 2021 Nov 17;14(22):6950. doi: 10.3390/ma14226950

Figure 3.

Figure 3

Dependencies G = f(Tp) for silicon with resistivity ρ = 0.4 Ω cm, boron-doped, implanted with Ne+ neon ions with energy E = 100 keV and dose D = 4.0 × 1013 cm−2, determined for the frequency f = 1 kHz and four different annealing temperatures Ta (a) and annealing temperature Ta = 598 K and four different measurement frequencies f (b).