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. 2021 Nov 17;14(22):6950. doi: 10.3390/ma14226950

Figure 6.

Figure 6

Figure 6

Dependencies G/ω = f(Tp) for silicon with resistivity ρ = 0.4 Ω cm, boron-doped, implanted with Ne+ neon ions with energy E = 100 keV and doses of D = 4.0 × 1013 cm−2 (a), D = 2.2 × 1014 cm−2 (b), D = 4.0 × 1014 cm−2, respectively, (c) determined for different f and the annealing temperature Ta = 598 K.