Figure 8.
The Arrhenius plots of the function ln(et(Tp)/Tp2) = f(1/kTp) for silicon with ρ = 0.4 Ω cm, doped with boron, implanted with Ne+ neon ions with energy E = 100 keV and doses D = 4.0 × 1014 cm−2 (a), D = 2.2 × 1014 cm−2 (b) and D = 4.0 × 1014 cm−2 (c), annealed at Ta = 598 K: 1—empirical data, 2—linear approximation.