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. 2021 Dec 3;7(49):eabj6711. doi: 10.1126/sciadv.abj6711

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Fig. 3. — (A) I_DS traces recorded at various V_G − V_T in 10 mM HCl with 3-kHz sampling frequency. The histograms of I_DS present the change of occupancy status of the single DB by V_G. (B) Extracted τ_c and τ_e as a function of V_G − V_T. (C) Schematics of energy barriers of a general analyte-receptor reaction process (top) and the H⁺ capture and emission process on the SiNWFET surface (bottom). (D) τ_c and τ_e as a function of HCl concentration at I_DS = 40 nA. (E) Relative signal amplitude as a function of V_G − V_T. The solid curves in (B), (D), and (E) are the fitting results.