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. 2021 Nov 18;34(3):2104608. doi: 10.1002/adma.202104608

Figure 3.

Figure 3

Physical principles of tri‐channel transistor sensors. A) Transfer current–voltage characteristics of tri‐channel transistor sensors obtained from experiment and modeling using COMSOL Multiphysics. The applied drain voltage (V D) was +3 V, and the subthreshold regions are indicated in gray. B–F) Corresponding COMSOL simulations showing the electron density distributions along the cross‐section of the In2O3/ZnO heterostructure under the source and drain electrodes (labeled as S and D, respectively) and the electron flow streamlines within the channel regions, with different gate voltages (V G) applied: B) −1 V; C) 0 V; D) 1 V; E) 8 V; F) 20 V, and a constant V D = 3 V. G) Modeled transfer current–voltage characteristics (V D = 3 V) for baseline and under the exposure of simulated surface‐charged analytes. H–L) Corresponding COMSOL electron density distributions under the influence of simulated analytes when applying V D = 3 V and H) V G = −1 V; I) V G = 0 V; J) V G = 1 V; K) V G = 8 V; L) V G = 20 V to the transistor sensors. The electrodes and analytes are shown to indicate their positions with respect to the devices.