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. 2021 Oct 19;8(23):2102088. doi: 10.1002/advs.202102088

Figure 1.

Figure 1

CVT synthesis and characterization of ZrGeSe single crystals. a) Schematic of the CVT growth method. b) Electronic band structure of the bulk ZrGeSe. c) The lattice structure of ZrGeSe. The natural cleavage plane gives rise to the neighboring Zr–Se layers, which possess relatively weak Zr–Se bonding. d) Element mapping. The scale bar corresponds to 500 nm.

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