Figure 2.

The performances of the ZrGeSe‐based photodetector. a) Schematic representation of measurement setup on the top. A THz spot with uniform intensity distribution measured by a terahertz camera is shown on the right. b) Bias‐dependence of detected signal at 0.26 THz, ranging from −0.1 to 0.1 V with 0.01 V step. c) Dynamic photosignal curve with different incident power densities. d) Polar diagram of photosignal characteristics as a function of θ (θ = 90^°: fan‐shaped antenna axis parallel to the radiation polarization), inset shows an optical image of the device and the photoactive region of ZrGeSe channel.