| FIB |
Focused ion beam |
| MO |
Magneto-optical |
| AFM |
Atomic force microscopy |
| EDS |
Energy Dispersive X-ray Spectrometry |
| SEM |
Scanning Electron Microscope |
| GF |
Grooved Film |
| PF |
Plain Film |
| S |
Plain region of Grooved Film |
| S′ |
Groove region of Grooved Film |
|
Superconducting critical temperature |
| WL |
Weak-link |
|
Weak-link critical temperature |
|
Remnant DC magnetic field |
| h |
Applied excitation field amplitude |
| T |
Temperature |
|
Temperature-dependent resistivity |
| n |
Power-law exponent in
|
|
() |
Cross-section area of the grain (groove) |
|
() |
Length of the grain (groove) |
|
Residual resistivity |
|
Groove resistivity |
|
Grain resistivity |
|
Electron-phonon-impurity resistivity contribution |
|
interband scattering resistivity contribution |
|
intraband scattering resistivity contribution |
|
Resistivity at 10 K |
|
Resistivity at 300 K |
|
Voltage measured between electrodes 2 and 3 (plain region) |
|
Voltage measured between electrodes 3 and 4 (SS′S contribution) |
| B |
Electron-phonon-impurity coefficient |
|
Debye temperature |
|
Upper limit of temperature to fit
|
|
Temperature-dependent AC susceptibility |
|
Real part of
|
|
Imaginary part of
|
| f |
Frequency |
| R |
Resistance |
|
Residual resistivity ratio |
| l |
Mean free path |
|
Coherence length |
|
Penetration depth |
|
Upper critical field |