. 2021 Nov 27;21(23):7930. doi: 10.3390/s21237930

Table 2.

Threshold displacement energy for diamond, 4H-SiC, Ga $_{2}$ O $_{3}$ and GaN. Reference to source is shown in square parentheses.

	Diamond	4H-SiC	Ga $_{2}$ O $_{3}$	GaN
Threshold displacement energy (eV)	35 [4]	Si:35 C:20 [4]	25 [32]	Ga:18 N:22 [4]