Table 2. Model-independent descriptive parameters of intraburst gating for the indicated mutant CFTR constructs in the E1371S background.

Gating parameters were obtained from last-open-channel recordings as described in Materials and methods. Data are displayed as mean ± SEM from five to six patches.

	τflicker (ms)	τopen (ms)	K eq|B
Background (E1371S)	11 ± 2.3	200 ± 27	17 ± 3.9
R117H	58 ± 7.3	11 ± 1.1	0.20 ± 0.031
E1124Δ	42 ± 6.0	18 ± 1.7	0.42 ± 0.070
R117H E1124Δ	150 ± 18	6.2 ± 0.50	0.042 ± 0.0060