Table 1.
Sample | Planes (hkℓ) | 2θ, ° | FWHM, ° | D, nm | Strain XE‐4 | DIS X1014 |
---|---|---|---|---|---|---|
first procedure of A. cepa | 101 | 25.305 | 0.225 | 36.027 | 38.471 | 7.704 |
200 | 48.052 | 0.193 | 44.791 | 30.944 | 4.985 | |
323 | 55.094 | 0.243 | 36.671 | 37.796 | 7.436 | |
second procedure of A. cepa | 101 | 25.217 | 0.199 | 40.630 | 34.113 | 6.058 |
200 | 47.946 | 0.167 | 51.916 | 26.697 | 3.710 | |
004 | 37.684 | 0.203 | 41.084 | 33.736 | 5.925 | |
first procedure of C. annum | 101 | 25.110 | 0.219 | 36.967 | 37.493 | 7.318 |
200 | 47.838 | 0.197 | 43.979 | 31.515 | 5.17 | |
004 | 37.589 | 0.172 | 48.547 | 28.55 | 4.243 | |
second procedure of C. annum | 101 | 25.324 | 0.195 | 41.598 | 33.319 | 5.779 |
200 | 48.054 | 0.15 | 57.721 | 24.012 | 3.002 | |
004 | 37.832 | 0.128 | 65.282 | 21.231 | 2.347 |
(hkℓ) planes: crystallographic plane; FWHM: full width at half maximum; D : dimension of crystal in nm; η × 10−4 : strain value; δ × 1014 : dislocation density.