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. 2021 Dec 3;118(50):e2115703118. doi: 10.1073/pnas.2115703118

Fig. 5.

Fig. 5.

Low switching barrier with high thermal stability. (A) A comparison of ferroelectric switching with a low “collective” barrier, and ferroelectric (FE)-antiferroelectric (AFE) transition with a high “isolated” barrier in WTe2 bilayer. Reprinted with permission from ref. 22. (B) Ripplocation in MoS2 bilayer. Reprinted with permission from ref. 31. (C) Optical-driven transition from AA′ to AB′ stacking in BN bilayer. Reprinted with permission from ref. 57.