Fig. 7. (a) The J–V curves of undoped and different amounts Sn ion doped perovskite, (b) the best accomplishment J–V devices under forward and reverse scanning, (c) PCE statistical distribution of without Sn, 0.1% Sn, 0.2% Sn and 0.3% Sn PSCs devices and (d) normalized PCE stability of undoped and 0.2% Sn doped CsPbBr3 PSCs devices as a function of storage period under open-air environment respectively.
