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. 2021 Dec 9;9:764628. doi: 10.3389/fchem.2021.764628

FIGURE 6.

FIGURE 6

(A) Optical microscopy image and (B) schematic diagram of OFET device of C60/3,5-TPP, inset: scanning electron microscopy (SEM) image of C60/3,5-TPP. (C) Wavelength dependence of the output characteristics of a C60/3,5-TPP phototransistor at VG = 80 V when illuminated with different LEDs (Elight = 0.1 mW/cm2). (D) Output characteristic curves of the phototransistor based on C60/3,5-TPP at VG = 80 V when illuminated with 660 nm light of different intensities (Elight) (Reproduced from Wakahara et al. (2020) with permission from American Chemical Society, Copyright 2020.).