. 2021 Apr 13;11(23):13751–13762. doi: 10.1039/d1ra01403j

Calculated activation energy, ΔE_o and pre-exponential factor, σ_o for In₃Se₂ and In₂Se₃ phases of indium selenide thin films.

Annealing temperature (°C)	In₃Se₂ phase		In₂Se₃ phase
Annealing temperature (°C)	Activation energy, ΔE_o (eV)	Pre-exponential factor, σ_o (Ω cm)⁻¹	Activation energy, ΔE_o (eV)	Pre-exponential factor, σ_o (Ω cm)⁻¹
250	0.32	2.36	0.29	14.16
300	0.33	1.76	0.26	27.38
350	0.40	9.30	0.32	52.98

Calculated activation energy, ΔEo and pre-exponential factor, σo for In3Se2 and In2Se3 phases of indium selenide thin films.