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. 2021 Nov 25;11(12):478. doi: 10.3390/bios11120478

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© 2021 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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Relation of Schottky barrier height with sensitivity of MoS₂ FET sensor. (a) Schematic diagram of MoS₂ FET sensor with ionophore thin film. (b) An optical image of MoS₂ flake (in inset) and top view of MoS₂ FET sensor device. (c) Relative resistance of MoS₂ FET sensor in different AsNO₂^- concentrations with different types of metal contact electrodes (titanium (Ti), nickel (Ni) and platinum (Pt). Titanium metal contacts show the best sensitivity. (d) Drain current of MoS₂ FET with titanium metal contacts and (e) drain current of MoS₂ FET with platinum metal contacts. Reprinted from [224], with the permission of AIP Publishing.