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. 2021 Nov 24;12(12):1436. doi: 10.3390/mi12121436

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© 2021 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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The Hf_0.5Zr_0.5O₂ (HZO) thin film for in situ electrical experiments. (a) Schematic diagram of the HZO-based ferroelectric thin film capacitance structure for experiment. (b) Typical P–V curves of HZO(5nm) capacitor. (c) The tendency of Pr to cycles under 2.5 V. (d) High resolution TEM (HRTEM) image shows the in situ biasing process for a local area in the HZO thin film with the aid of tungsten probe.