Table 3.
Synthesis methods | Materials | Thickness (nm) | Lateral size (μm) | Applications | Ref. |
---|---|---|---|---|---|
First-generation | In2O3 | 4.5 | >10 | Electron devices | (Alsaif et al., 2019a) |
Ga2O3 | ∼1.5 | >100 | Field effect transistors | (Carey et al., 2017) | |
SnO | 1.1 | >40 | Gas sensor | (Daeneke et al., 2017) | |
Bi2O3 | 0.75 | >10 | Photodetector | (Messalea et al., 2018) | |
ZnO | 1.1 | >100 | Piezoelectric filed | (Mahmood et al., 2021) | |
PbO | 1 | >100 | Piezoelectric filed | (Ghasemian et al., 2020) | |
Second-generation | MnO2 | 1 | <1 | Photocatalysis | (Ghasemian et al., 2019) |
HfO2 | 0.64 | >20 | – | (Zavabeti et al., 2017) | |
Gd2O3 | 0.51 | >40 | – | (Zavabeti et al., 2017) | |
Al2O3 | 1.1 | >20 | – | (Zavabeti et al., 2018) | |
Third-generation | TiO2 | 3 | <1 | – | (Alkathiri et al., 2020) |
TeO2 | 1.5 | >100 | Transparent electronics devices | (Zavabeti et al., 2021) | |
ITO | ∼1.5 | >30 | Flexible electronic devices | (Datta et al., 2020) | |
IZO | ∼1.59 | >30 | Flexible electronic devices | (Jannat et al., 2021) |