Figure 2.
(a) Schematic representation of the nanowire prior to gate deposition, where the thickness of the HSQ spacer defines the position of the gate. (b) Transfer characteristics (linear scale) at VDS = 500 mV representing the on-state for varied gate position LHSQ. (c) Transfer characteristics (log scale) at VDS = 50 mV representing the off-state for varied gate position LHSQ.
