Figure 3.

(a) Phase map and axial potential calculated from electron holography data for the InAs nanowire showing the expected initial n⁺-region (0 to ∼25 nm). Axial potential extracted from the center core (mean value of 15 nm, and 5 nm wide volume) of the nanowire phase map, where oscillations are caused by diameter variation. The simulated potential is calculated using a 1D zero-current model to determine the self-consistent electrostatic potential. The observed potential variation is significantly larger than the measurement error of ±0.092 V. (b) High-resolution TEM image of the heterostructure nanowire showing (c) stacking faults at regions with higher Sn doping incorporation and (d) WZ crystal structure of the InAs segment.