Table 2.

The electrical and geometrical parameters of the proposed design in the core–shell junction.

Parameters	Description	Nominal value
${\mu }_p$	Hole mobility	450 cm${}^2/(\text{V}·\text{s})$52,53
${\mu }_n$	Electron mobility	1400 cm${}^2/(\text{V}·\text{s})$52,53
rad	Radiative recombination coefficient	$1.6\times {10}^{-14}$ cm${}^3$/s53
n-Aug	Electron auger recombination	$2.8\times {10}^{-31}$ cm${}^6$/s—300 K54
p-Aug	Hole auger recombination	$9.9\times {10}^{-32}$ cm${}^6$/s—300 K54
SRV (Si–Ag)	Si Surface recombination velocity to Ag	$1\times {10}^7$ cm/s—300 K43
SRV (Si-$Si{O}_2$)	Si Surface recombination velocity to $Si{O}_2$	$1\times {10}^2$ cm/s—300 K27,33
${\tau }_o$	Si average carrier lifetime	$4\times {10}^{-6}$ s55
$W_{\mathit{rs}}$	n-doped radial (lateral) shell thickness	10 nm49,50
$W_{\mathit{as}}$	n-doped axial (top) shell thickness	10 nm
$d_m$	ITO layer thickness	200 nm49,56
$N_d$	n-type donor concentration	$1\times {10}^{18}$ ${\text{cm}}^{-3}$49,57
$N_a$	p-type substrate acceptor concentration	$1\times {10}^{15}$ ${\text{cm}}^{-3}$48
$N_a^{+}$	$p^{+}$-type BSF concentration	$1\times {10}^{19}$ ${\text{cm}}^{-3}$48