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. 2022 Jan 3;15(1):334. doi: 10.3390/ma15010334

Figure 2.

Figure 2

Carrier density of H doped IGZO films obtained from the in situ Hall measurement performed in air and vacuum atmosphere: (a) R[H2] = 2%; (b) R[H2] = 5%; (c) R[H2] = 8%; (d) Carrier density variation as a function of annealing time at fixed temperature of 150 °C performed in air.