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. 2021 Dec 22;12(1):19. doi: 10.3390/nano12010019

Figure 3.

Figure 3

Automatically recorded I–V characteristics of MIS structures with ZnO:N films, deposited at different gas ratios: Ar:O2:N2 = 50:40:10 (a), Ar:O2:N2 = 50:10:40 (b), and Ar:O2:N2 = 50:25:25 (c). The corresponding sample numbers are given in the insets. The lower left inset in (a) shows the schematic structure of the measured samples.