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. 2022 Jan 4;7(2):1733–1739. doi: 10.1021/acsomega.1c04564

Figure 2.

Figure 2

Effects of implantation fluence on the defects. The fluence was varied from 1 × 1013 to 1 × 1016 ions/cm2. The energy of the implanted nitrogen ions was fixed at 30 keV. (a) PL spectra at room temperature for the defects created with different fluences. (b) ODMR measurements without an external magnetic field for the defects created with different fluences. (c) The ZFS parameter E as a function of fluence from 1 × 1013 to 1 × 1015 ions/cm2. (d) The spin–lattice relaxation time T1 as a function of fluence from 1 × 1013 to 1 × 1015 ions/cm2.