SERS-active semiconductors prepared with different defect strategies and reported SERS performance.

Defect types	Materials	Molecules	Reported SERS performance		Ref.
			EF	LOD
Vacancies	H2/Ar-W18O49	R6G	3.4 × 105	1 × 10−7 mol L−1	26
	Cu2O	4-MPY		5 × 10−10 mol L−1	27
	WO3−x	R6G	1.1 × 104	1 × 10−7 mol L−1	31
	ZnO1−x	R6G	1.1 × 104	1 × 10−7 mol L−1	31
	WO3	Au-4MBA	10.00		32
	Au/TiO2	DNT		1 × 10−15 mol L−1	33
	Ag/Ag–TiO2	4-MBA	1.68 × 106		35
	WO3	RhB	1.14 × 106	1 × 10−7 mol L−1	36
	TiO2	PABA		1 × 10−8 mol L−1	37
	Cu2O	SR3		0.3 mg kg−1	40
	MoS2	R6G	63.5		41
Dopants	TiO2–xNy	R6G		5 × 10−8 mol L−1	31
	Black TiO2	R6G	1.2 × 106	1 × 10−7 mol L−1	42
	Cation-intercalated WO3	R6G	8.86 × 104	1 × 10−6 mol L−1	43
	Co–MoO3−x	MB	1.01 × 105	1 × 10−7 mol L−1	48
	N-doped graphene	RhB		5 × 10−11 mol L−1	61
	N-doped graphite	CV	3.2 × 107	1 × 10−7 mol L−1	62
	Ozone-treated graphene	RhB	2.5 × 104		57
	MoS2−xOx	R6G	1.4 × 105	1 × 10−7 mol L−1	63
Lattice disorders	Amorphous TiO2 nanosheets	4-MBA	1.86 × 106		64
	Amorphous ZnO nanocages	4-MBA	6.62 × 105		65
	Amorphous Rh3S6	4-NBT	3 × 104	1 × 10−7 mol L−1	66
		R6G	1 × 105
	HxMoO3 quantum dots	MB	9.5 × 105	1 × 10−9 mol L−1	67
	Ni(OH)2	MB	2.35 × 103	1 × 10−8 mol L−1	68
	Ultrathin WO3 nanosheets	MB		1 × 10−7 mol L−1	69
	Cu2O superstructures	R6G	8 × 105	6 × 10−9 mol L−1	38
	Defective VO2 nanosheets	R6G		1 × 10−7 mol L−1	71
	h-MoO3	MB	6.99 × 105	1 × 10−9 mol L−1	72
Metallicity	MoO2	R6G	3.75 × 106	1 × 10−7 mol L−1	74
	MoO2−x	R6G		1 × 10−8 mol L−1	75
	δ-MoN	R6G	8.16 × 106	1 × 10−10 mol L−1	76
	γ-Mo2N	2,4,5-TCP, 2,4-DCP		1 × 10−11 mol L−1	77
	δ-MoN	R6G	3.6 × 107	1 × 10−11 mol L−1	78
	VO2	R6G	6.7 × 107	1 × 10−10 mol L−1	79
	TiN	R6G	∼105	1 × 10−7 mol L−1	80
	Ti3O5	R6G		1 × 10−10 mol L−1	81