Fig. 8.

Combination of electric and photonic stimuli for demonstrating optoelectronic synaptic devices through Al/TiN_xO_2-x/MoS₂/ITO heterostructures. a Schematic illustration of the device structure, b EPSC feature using photonic stimulus (3.15 mW cm⁻², 10 s) and electrical erase with a voltage pulse (−3 V, 50 ms), and c light-induced EPSC-based PPF index. d The conductance changes under consecutive light pulses and e cyclic test to demonstrate the “learning–forgetting–relearning” process.

Reproduced with permission from Ref. [161]. Copyright 2021, Advanced Functional Materials (Color figure online)