Fig. 9.

Demonstration of optoelectronic neuromorphic device application via ferroelectric α-In₂Se₃ thin flakes. a AFM image of the fabricated optoelectronic memory device composed of the α-In₂Se₃ channel and electrodes. b Schematic illustration of a proposed optical memory-based synaptic device. c The fatigue test with light pulses for writing and electrical pulses for erasing. d Retention measurement over 5000 s. The on/off ratio decreased drastically after 30 s. e Verifying the multi-level current switching properties using consecutive light pulses in the α-In₂Se₃ channel. f Comparison of EPSC fired by light pulses under different light intensities. g PPF emulation using two photonic stimuli with different light intensities and pulse intervals. h Demonstration of optical potentiation and electrical depression with linear relationship for 30 cycles.

Reproduced with permission from Ref. [182]. Copyright 2020, Advanced Functional Materials (Color figure online)