Table 1.

Memristor and neuromorphic devices based on 2D TMCs

Device	Working principle	Structure	Growth/fabrication method	Switching/SET voltage (V)	Pulse width (ms)	Energy per spike (J)	Refs.
Memristor	Conductive filament formation	Ag/MoS2/Ag	CVD growth	0.35–0.4	1	–	[109]
Memristor		Cu/MoS2/Au	MOCVD growth	0.1–0.2	1	–	[107]
Memristor		Ni/Au/MoS2/Gr	CVD growth	3	5	–	[110]
Memristor		Ag/ZrO2/WS2/Pt	CVD growth	0.4	100 ns	–	[111]
Memristor	Vacancy migration	Pd/WS2/Pt	Liquid exfoliation	2	500 ns	~ 26 fJ	[112]
Memristor		Gr/ MoS2−xOx /Gr	Mechanical exfoliation	3.5	1 μs	–	[63]
Memristor		Ag/ WO3−x /WSe2/Gr	Mechanical exfoliation	3	10	~ 20 pJ	[113]
Memristor		Ag/MoOx/MoS2/Ag	Langmuir–Blodgett coating	0.15	50 μs	–	[114]
Memristor	Phase transition	Au/MoS2/Au	Mechanical exfoliation (lithiated MoS2, 2H → 1 T)	4	1	–	[58]
Memristor		Ti/Ni/MoTe2/Ti/Au	Mechanical exfoliation (2H → 2Hd)	0.066	–	–	[59]
Memristor		Ag/MoS2/Ag	Mechanical exfoliation (2H → 1 T)	2.3	10 ns	–	[115]
Synaptic transistor	Charge trapping/de-trapping	Cr/Au/h-BN/Gr/h-BN/MoS2/Al2O3	Mechanical exfoliation	6	250	64 pJ	[116]
Optic-neural synaptic		Ti/Au/WSe2/WCL/h-BN/Pt/Au	Mechanical exfoliation	0.3	10	66 fJ	[89]
Synaptic transistor		Cr/Au/MoS2/h-BN/Gr	Mechanical exfoliation	3	0.1 s	5 fJ	[117]