Table 2.

Simulation parameters of N⁺-p-P⁺-n⁺ HgCdTe photodiodes.

Parameters	(100)	(111)B
Bandgap energy, Eg [eV]	$E_g\left(x,T\right)=-0.302+1.93\mathrm{x}-0.81x^2+0.832x^3+5.35\times {10}^{-4}\left(1-2x\right)T$
Intrinsic concentration, ni [cm−3]	$\begin{array}{c}{n}_i=\left(5.585-3.82x+0.001753T+0.001364xT\right)\\ \times {10}^{14}{E}_g^{3/4}{T}^{3/2}\exp \left(-\frac{E_g}{2k_{B}T}\right)\end{array}$
$\mathrm{Static}\mathrm{dielectric}\mathrm{constant},{\epsilon }_S$	${\epsilon }_s=20.5-15.5x+5.7x^2$
$\mathrm{High}-\mathrm{frequency}\mathrm{dielectric}\mathrm{constant},{\epsilon }_{\infty }$	${\epsilon }_{\infty }=15.2-15.6x+8.2x^2$
Cd composition in absorption region, xAbs	0.213	0.216
Doping in absorption region, NA [cm−3]	3 × 1015	2 × 1016
Absorber thickness, dAbs [μm]	5.1	5.9
Trap concentration, NT [cm−3]	2.5 × 1014	1 × 1015
Trap ionisation energy, ET	0.85 × Eg	0.85 × Eg
Trap capture coefficient, γ = σvyh [cm3 s−1]	3 × 10–8	1.5 × 10–8
SRH carrier lifetime, τSRH [ns]	135	66
Electron effective mass$,m_e^{\ast }/m_0$	0.071 × Eg	0.071 × Eg
$\mathrm{Hole}\mathrm{effective}\mathrm{mass},m_{hh}^{\ast }/m_0$	0.65	0.65
Overlap matrix F1F2	0.15	0.2
Operating temperature, T [K]	230	230

σ is the capture cross-section for carrier, and v_th is the thermal velocity.